N.C.S.R. "Demokritos"

Δημοσιεύσεις

Τομέας Επιστήμης Υλικών

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Αθανάσιος Δημουλάς


Βιβλία και κεφάλαια

  • A. Dimoulas (2007) Rare Earth Oxides Grown by Molecular Beam Epitaxy for Ultimate Scaling, Rare earth oxide thin films growth characterization and applications (ed. M. Fanciulli, G. Scarel) Springer, Berlin, Heidelberg 379-390. [link]
  • A. Dimoulas (2006) Electrically Active Interface and Bulk Semiconductor Defects in High-k/Germanium Structures, Defects in High-k Gate Dielectric Stacks (ed. E. Gusev) Springer, Dordrecht, The Netherlands 237-248. [link]
  • A. Dimoulas (2005) Molecular Beam deposition of high-k gate dielectrics for advanced CMOS, Materials for Information Technologies, Chapter “Advances in Thin Film Deposition (ed. E. Zschech, C. Whelan, T. Mikolajick, ) Springer -Verlag 3-15. [link]

  • Δημοσιεύσεις σε διεθνή περιοδικά με κριτή

  • Dimoulas A., Tsoukalas D. (2010) Editorial Forward, Solid State Electronics, Solid State Electronics 54(9), 809-.
  • Dimoulas, A., Tsoutsou, D., Panayiotatos, Y., Sotiropoulos, A., Mavrou, G., Galata, S. F., Golias, E. (2010) The role of La surface chemistry in the passivation of Ge, Appl. Phys. Lett. 96, 012902-.
  • Evangelou, E.K., Rahman, M.S., Androulidakis, I.I., Dimoulas, A., Mavrou, G., Giannakopoulos, K.P., Anagnostopoulos, D.F., Valicu, R., and Borchert, G.L. (2010) Structural and electrical properties of HfO2/Dy2O3 gate stacks on Ge substrates, Thin Solid Films 518, 3964-.
  • Rahman, M.S., Evangelou, E.K., Androulidakis, I.I., Dimoulas, A., Mavrou, G., and Galata, S. (2010) SILC decay in La2O3 gate dielectrics grown on Ge substrates subjected to constant voltage stress, Solid-State Electron 54, 979-984.
  • Tsoutsou, D., Panayiotatos, Y., Sotiropoulos, A., Mavrou, G., Golias, E., Galata, S. F., and Dimoulas, A. (2010) Chemical stability of lanthanum germanate passivating layer on Ge upon high-k deposition: A photoemission study on the role of La in the interface chemistry, J. Appl. Phys. 108, 064115-.
  • Andersson, C., Rossel, C., Sousa, M., Webb, D.J., Marchiori, C., Caimi, D., Siegwart, H., Panayiotatos, Y., Dimoulas, A., Fompeyrine, J. (2009) Lanthanum germanate as dielectric for scaled Germanium metal–oxide–semiconductor devices, Microelectronic Engineering 86, 1635-1637.
  • Dimoulas, A., Toriumi, A., Mohney, S. E. (2009) Source and Drain Contacts for Germanium and III-V FETs for Digital Logic (Review Article), MRS Bulletin ,Vol. 34, No. 7, 522-529.
  • Evangelou, E.K., Rahman, M.S., Dimoulas, A. (2009) Correlation of charge buildup and stress-induced leakage current in Cerium oxide films grown on Ge(100) substrates, IEEE TED56, 399-.
  • Galata, S.F., Mavrou, G., Tsipas, P., Sotiropoulos, A., Panayiotatos, Y., Dimoulas A. (2009) Metal-oxide-semiconductor devices on p-type Ge with La2O3 and ZrO2/La2O3 as gate dielectric and the effect of postmetallization anneal, Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 27 (1), 246-248.
  • Rahman, M.S., Evangelou, E.K., Androulidakis, I.I., Dimoulas, A. (2009) Current transport mechanism in high-k Cerium oxide gate dielectrics grown on Ge substrates, Electrochem. Sol. St. Lett. 12 (5), H165-H168.
  • Rahman, M.S., Evangelou, E.K., Androulidakis, I.I., Dimoulas, A. (2009) Study of stress-induced leakage current (SILC) in HfO2/Dy2O3 high-kappa gate stacks on germanium, Microelectronics Reliability 49 (1), 26-31.
  • Rahman, M.S., Evangelou, E.K., Androulidakis, I.I., Dimoulas, A., Mavrou, G., and Tsipas, P. (2009) Investigation of voltage dependent relaxation, charge trapping and stress-induced leakage current effects in HfO2/Dy2O3 gate stacks grown on Ge(100) substrates, J. Vac. Sci. Technol. B27, 439-.
  • Tsipas, P., and Dimoulas, A. (2009) Modeling of negatively charged states at the Ge surface and interfaces, Appl. Phys. Lett. 94, 012114-.
  • Tsoutsou, D., Apostolopoulos, G., Galata, S. F., Tsipas, P., Sotiropoulos, A., Mavrou, G., Panayiotatos, Y., Dimoulas, A., Lagoyannis A., Karydas, A. G., Kantarelou V., Harissopoulos, S. (2009) Stabilization of very high-k tetragonal phase in Ge-doped ZrO2 films grown by atomic oxygen beam deposition, J. Appl. Phys. 106(2), 024107-.
  • Tsoutsou, D., Apostolopoulos, G., Galata, S., Tsipas, P., Sotiropoulos, A., Mavrou, G., Panayiotatos, Y., Dimoulas, A. (2009) Stabilization of a very high-k tetragonal ZrO2 phase by direct doping with germanium, Microelectronic Engineering 86, 1626-1628.
  • Uppal, H.J., Bernardini, S., Efthymiou, E., Volkos, S.N., Dimoulas, A., Markevich, V., Hamilton, B., Peaker, A.R. (2009) "Nanoscale electrical characterization of ultrathin high-k dielectric MOS stacks: a conducting AFM study,, Mater. Sci. in Semicon. Processing 11(5-6), 250-253.
  • Afanas'ev, V.V., Stesmans, A., Mavrou, G., Dimoulas, A. (2008) Beneficial effect of La on band offsets in Ge/high-? insulator structures with GeO2 and La2O3 interlayers, Applied Physics Letters 93, -.
  • C. Rossel, A. Dimoulas, A. Tapponnier, D. Caimi, D.J. Webb, C. Anderson, M. Sousa, C. Marchiori, H. Siegwart, J. Fompeyrine, R. Germann (2008) "Ge p-channel MOSFETS with La2O3 and Al2O3 Gate Dielectrics, ESSDERC Proceedings of the 38th European Solid-State Device Research Conference , 79-82.
  • Dimoulas, A., Panayiotatos, Y., Tsipas, P., Galata, S., Mavrou, G., Sotiropoulos, A., Marchiori, C., Rossel, C., Webb, D., Andersson, C., Soussa, M., Richter, M., Fompeyrine, J. (2008) Gate Dielectrics for High Mobility Semiconductors , ECS Trans. 16 (5), 295-306.
  • G. Mavrou, P. Tsipas, A. Sotiropoulos, S. Galata, Y. Panayiotatos, A. Dimoulas, C. Marchiori, and J. Fompeyrine (2008) Very high-k ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates, Appl. Phys. Lett. 93, 212904-.
  • G. Mavrou, S. Galata, P. Tsipas, A. Sotiropoulos, Y. Panayiotatos, A. Dimoulas, E.K. Evangelou, J. W. Seo, Ch. Dieker (2008) Electrical Properties of La2O3 and HfO2/ La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices, J. Appl. Phys. 103, 014506-.
  • M. S. Rahman, E. K. Evangelou, A. Dimoulas, G. Mavrou, and S. Galata (2008) Anomalous charge trapping dynamics in cerium oxide grown on germanium substrate, J. Appl. Phys. 103, 064514-.
  • P. Tsipas, G. Mavrou, S.N. Volkos, A. Sotiropoulos, S. Galata, Y. Panayiotatos, A. Dimoulas (2008) Very High-k Tetragonal ZrO2 on Ge with GeO2 Passivating Interfacial Layer , ECS Trans. 16 (10), 767-772.
  • P. Tsipas, S. N. Volkos, A. Sotiropoulos, S. F. Galata, G. Mavrou, D. Tsoutsou, Y. Panayiotatos, A. Dimoulas, C. Marchiori, and J. Fompeyrine, (2008) Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks, Appl. Phys. Lett. 83, 082904-.
  • Brunco, D.P., Dimoulas, A., Boukos, N., Houssa, M., Conard, T., Martens, K., Zhao, C., Bellenger, F., Caymax, M., Meuris, M., Heyns, M.M. (2007) Materials and electrical characterization of molecular beam deposited CeO2 and CeO2/ HfO2 bilayers on germanium, Journal of Applied Physics 102, 024104-.
  • Chen, D.K., Schrimpf, R.D., Fleetwood, D.M., Galloway, K.F., Pantelides, S.T., Dimoulas, A., Mavrou, G., Sotiropoulos, A., Panayiotatos, Y. (2007) Total dose response of Ge MOS capacitors with HfO2/Dy 2O3 gate stacks, IEEE Transactions on Nuclear Science 54, 971-974.
  • D.J. Webb, J.P-Fompeyrine, S. Nakagawa, A. Dimoulas, C. Rossel, M. Sousa, R. Germann, S.F. Alvarado, J.P. Locquet, C. Marchiori, H. Siegwart, A. Callegari, E. Kiewra, Y. Sun, J. De Souza, N. Hoffmann (2007) In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAPs: effect of GaAs surface reconstruction, Microelectronic Engineering 84, 2142-.
  • Dimoulas, A., Brunco, D.P., Ferrari, S., Seo, J.W., Panayiotatos, Y., Sotiropoulos, A., Conard, T., Caymax, M., Spiga, S., Fanciulli, M., Dieker, Ch., Evangelou, E.K., Galata, S., Houssa, M., Heyns, M.M. (2007) Interface engineering for Ge metal-oxide-semiconductor devices, Thin Solid Films 515, 6337-6343.
  • Dimoulas, A., Panayiotatos, Y., Sotiropoulos, A., Tsipas, P., Brunco, D.P., Nicholas, G., Van Steenbergen, J., Bellenger, F., Houssa, M., Caymax, M., Meuris, M. (2007) Germanium FETs and capacitors with rare earth CeO2/HfO2 gates, Solid-State Electronics 51, 1508-1514.
  • Evangelou, E.K., Mavrou, G., Dimoulas, A., Konofaos, N. (2007) Rare earth oxides as high-k dielectrics for Ge based MOS devices: An electrical study of Pt/Gd2O3/Ge capacitors, Solid-State Electronics 51, 142-147.
  • G. Mavrou, S.F. Galata, A. Sotiropoulos, P. Tsipas, Y. Panayiotatos, A. Dimoulas, E.K. Evangelou, J.W. Seo, Ch. Dieker (2007) Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric, Microelectronic Engineering 84, 2324-2327.
  • Galata, S.F., Evangelou, E.K., Panayiotatos, Y., Sotiropoulos, A., Dimoulas, A. (2007) Post deposition annealing studies of lanthanum aluminate and ceria high-k dielectrics on germanium, Microelectronics Reliability 47, 532-535.
  • J.W. Seo, Ch. Dieker, A. Tapponnier, Ch. Marchiori, M. Sousa, J.-P. Locquet, J. fompeyrine, A. Ispas, C. Rossel, Y. Panayiotatos, A. Sotiropoulos, A. Dimoulas (2007) Epitaxial germanium-on-insulator grown on (001) Si, Microelectronic Engineering 84, 2328-2331.
  • K. Martens, W. F. Wang, A. Dimoulas, G. Borghs, M. Meuris, G. Groeseneken, H. E. Maes (2007) Determining weak Fermi-level pinning in MOS devices by conductance and capacitance analysis and application to GaAs MOS devices, Sol. St. Electron. 51, 1101-.
  • Nicholas, G., Brunco, D.P., Dimoulas, A.D., Van Steenbergen, J., Bellenger, F., Houssa, M., Caymax, M., Meuris, M., Panayiotatos, Y., Sotiropoulos, A. (2007) Germanium MOSFETs with CeO2/HfO2 gate stacks, IEEE Transactions on Electron Devices 54, 1425-1430.
  • Seguini, G., Perego, M., Spiga, S., Fanciulli, M., Dimoulas, A. (2007) Conduction band offset of HfO2 on GaAs, Applied Physics Letters 91, -.
  • A. Dimoulas, M. Houssa, A. Ritenour, J. Fompeyrine, W. Tsai, J. Seo, Y. Panayiotatos, P. Tsipas, D.P. Brunco, M. Caymax, J.-P. Locquet, Ch. Dieker (2006) Current Challenges in Ge MOS Technology, ECS Transactions 3, 371-384.
  • Afanas'ev, V.V., Shamuilia, S., Stesmans, A., Dimoulas, A., Panayiotatos, Y., Sotiropoulos, A., Houssa, M., Brunco, D.P. (2006) Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators, Applied Physics Letters 88, 132111-.
  • Caymax, M., Van Elshocht, S., Houssa, M., Delabie, A., Conard, T., Meuris, M., Heyns, M.M., Dimoulas, A., Spiga, S., Fanciulli, M., Seo, J.W., Goncharova, L.V. (2006) HfO2 as gate dielectric on Ge: Interfaces and deposition techniques, Materials Science and Engineering B: Solid-State Materials for Advanced Technology 135, 256-260.
  • Dimoulas, A. (2006) Rare earth oxides grown by molecular beam epitaxy for ultimate scaling, Topics in Applied Physics 106, 379-390.
  • Dimoulas, A., Tsipas, P., Sotiropoulos, A., Evangelou, E.K. (2006) Fermi-level pinning and charge neutrality level in germanium, Applied Physics Letters 89, 252110-.
  • Ferrari, S., Spiga, S., Wiemer, C., Fanciulli, M., Dimoulas, A. (2006) Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy, Applied Physics Letters 89, 122906-.
  • Goldenblum, A., Pintilie, I., Buda, M., Popa, A., Lisca, M., Botila, T., Teodorescu, V., Dimoulas, A., Vellianitis, G. (2006) Electrical properties of as-grown molecular beam epitaxy high-k gate dielectrics deposited on silicon, Journal of Applied Physics 99, 0645105-.
  • Houssa, M., Conard, T., Bellenger, F., Mavrou, G., Panayiotatos, Y., Sotiropoulos, A., Dimoulas, A., Meuris, M., Caymax, M., Heyns, M.M. (2006) Electrical properties of atomic-beam deposited GeO1-xN x/HfO2 gate stacks on Ge, Journal of the Electrochemical Society 153, G1112-G1116.
  • Ritenour, A., Khakifirooz, A., Antoniadis, D.A., Lei, R.Z., Tsai, W., Dimoulas, A., Mavrou, G., Panayiotatos, Y. (2006) Subnanometer-equivalent-oxide-thickness germanium p -metal-oxide- semiconductor field effect transistors fabricated using molecular-beam-deposited high- k /metal gate stack, Applied Physics Letters 88, 132107-.
  • Satta A, Nicholas G, Simoen E, Houssa M, Dimoulas A, De Jaeger B, Van Steenbergen J, Meuris M (2006) Impact of germanium surface passivation, on the leakage current of shallow planar p-n junctions, Mater. Sci. in Semicon. Processing 9, 716-720.
  • Seguini, G., Spiga, S., Bonera, E., Fanciulli, M., Huamantinco, A.R., Först, C.J., Ashman, C.R., Blöchl, P.E., Dimoulas, A., Mavrou, G. (2006) Band alignment at the La2Hf2O7/(001) Si interface, Applied Physics Letters 88, 202903-.
  • Z.M. Rittersma, J.C. Hooker, G. Vellianitis, J.-P. Locquet, C. Marchiori, M. Sousa, J. Fompeyrine, L. Pantisano, W. Deweerd, T. Schram, M. Rosmeulen, S. De Gendt, A. Dimoulas (2006) Characterization of field-effect transistors with La2Hf2O7 and HfO2 gate dielectric layers deposited by molecular-beam epitaxy, J. Appl. Phys. 99, 024508-.
  • Dimoulas, A., Mavrou, G., Vellianitis, G., Evangelou, E., Boukos, N., Houssa, M., Caymax, M. (2005) HfO2 high- ? gate dielectrics on Ge (100) by atomic oxygen beam deposition, Applied Physics Letters 86, 032908-.
  • Dimoulas, A., Vellianitis, G., Mavrou, G., Evangelou, E.K., Argyropoulos, K., Houssa, M. (2005) Short minority carrier response time in HfO2 /Ge metal-insulator-semiconductor capacitors, Microelectronic Engineering 80, 34-37.
  • Dimoulas, A., Vellianitis, G., Mavrou, G., Evangelou, E.K., Sotiropoulos, A. (2005) Intrinsic carrier effects in HfO2 -Ge metal-insulator- semiconductor capacitors, Applied Physics Letters 86, 223507-.
  • Goldenblum, A., Pintilie, I., Buda, M., Popa, A., Botila, T., Dimoulas, A., Vellianitis, G. (2005) Space-charge-limited current involving carrier injection into impurity bands of high-k insulators, Applied Physics Letters 86, 203506-.
  • Houssa, M., Conard, T., Van Steenbergen, J., Mavrou, G., Panayiotatos, Y., Dimoulas, A., Meuris, M., Caymax, M., Heyns, M. (2005) Characterization of atomic-beam deposited GeO1-xN x/HfO2 stacks on Ge, Meeting Abstracts MA 2005-02, 961-.
  • Houssa, M., Conard, T., Van Steenbergen, J., Nicholas, G., Mavrou, G., Panayiotatos, Y., Dimoulas, A., Meuris, M., Caymax, M., Heyns, M.M. (2005) Characterization of atomic-beam deposited GeO1-xN x/HfO2 stacks on Ge, ECS Transactions 1, 9-16.
  • M. Malvestuto, R. Carboni, F. Boscherini, F. D’Acapito, S. Spiga, M. Fanciulli, A. Dimoulas, G. Vellianitis, G. Mavrou (2005) X-Ray absorption study of the growth of Y2O3 on Si(001), Phys. Rev. B 71, 075318-.
  • Mereu, B., Dimoulas, A., Vellianitis, G., Apostolopoulos, G., Scholz, R., Alexe, M. (2005) Interface trap density in amorphous La2Hf2O 7/SiO2 high-k gate stacks on Si, Applied Physics A: Materials Science and Processing 80, 253-257.
  • Seo, J.W., Dieker, Ch., Locquet, J.-P., Mavrou, G., Dimoulas, A. (2005) Hf O2 high-k dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability, Applied Physics Letters 87, 221906-.
  • Apostolopoulos, G., Vellianitis, G., Dimoulas, A., Hooker, J.C., Conard, T. (2004) Complex admittance analysis for La2Hf2O7/SiO2 high-? dielectric stacks, Applied Physics Letters 84, 260-262.
  • Argyropoulos, K., Dimoulas, A. (2004) Spin dependent Andreev reflection in ferromagnetic/insulator/d-wave superconductor ballistic junctions, Physica C: Superconductivity and its Applications 405, 77-83.
  • Dimoulas, A. (2004) E-MRS 2003 symposium I: Functional metal oxides - Semiconductor structures, Materials Science and Engineering B: Solid-State Materials for Advanced Technology 109, 1-.
  • Dimoulas, A., Vellianitis, G., Mavrou, G., Apostolopoulos, G., Travlos, A., Wiemer, C., Fanciulli, M., Rittersma, Z.M. (2004) La2Hf2O7 high-k gate dielectric grown directly on Si(001) by molecular-beam epitaxy, Applied Physics Letters 85, 3205-3207.
  • Fröhlich, K., Husekova, K., Machajdik, D., Hooker, J.C., Perez, N., Fanciulli, M., Ferrari, S., Wiemer, C., Dimoulas, A., Vellianitis, G., Roozeboom, F. (2004) Ru and RuO2 gate electrodes for advanced CMOS technology, Materials Science and Engineering B: Solid-State Materials for Advanced Technology 109, 117-121.
  • Mavrou, G., Vellianitis, G., Apostolopoulos, G., Argyropoulos, K., Dimoulas, A., Scholz, R. (2004) Si overgrowth on Y2O3 (1 1 0)/Si (0 0 1) by molecular beam epitaxy, Materials Science and Engineering B: Solid-State Materials for Advanced Technology 109, 39-41.
  • Mereu, B., Sarau, G., Dimoulas, A., Apostolopoulos, G., Pintilie, I., Botila, T., Pintilie, L., Alexe, M. (2004) Electrical properties of metal-oxide-silicon structures with LaAlO 3 as gate oxide, Materials Science and Engineering B: Solid-State Materials for Advanced Technology 109, 94-98.
  • S. Spiga, C Wiemer, M. Fanciulli, F. D’Acapito, F. Boscherini, A. Dimoulas, G. Vellianitis, G. Mavrou (2004) Structural characterization of epitaxial Y2O3 on Si (001) and of the Y2O3/Si interface, Mat. Sci. Eng. B 109, 47-.
  • Travlos, A., Boukos, N., Apostolopoulos, G., Dimoulas, A., Giannakopoulos, C. (2004) EELS study of oxygen superstructure in epitaxial Y2O3 layers, Materials Science and Engineering B: Solid-State Materials for Advanced Technology 109, 52-55.
  • V. Ioannou-Sougleridis, V. Constandoudis, M. Alexe, R. Scholz, G. Vellianitis, A. Dimoulas (2004) Effects of post-growth annealing experiments in epitaxial Y2O3 layers on Si (001), Thin Solid Films 468, 303-309.
  • Vellianitis, G., Apostolopoulos, G., Mavrou, G., Argyropoulos, K., Dimoulas, A., Hooker, J.C., Conard, T., Butcher, M. (2004) MBE lanthanum-based high-k gate dielectrics as candidates for SiO 2 gate oxide replacement, Materials Science and Engineering B: Solid-State Materials for Advanced Technology 109, 85-88.
  • Travlos, A., Boukos, N., Apostolopoulos, G., Dimoulas, A. (2003) Oxygen vacancy ordering in epitaxial layers of yttrium oxide on Si (001), Applied Physics Letters 82, 4053-4055.
  • V. Ioannou-Sougleridis, G. Vellianitis, A. Dimoulas (2003) Electrical properties of Y2O3 high-k gate dielectric on Si(001) : The influence of post-metallization annealing, J. Appl. Phys. 93, 3982-3989.
  • Vellianitis, G., Apostolopoulos, G., Dimoulas, A., Argyropoulos, K., Mereu, B., Scholz, R., Alexe, M., Hooker, J.C. (2003) Structural quality and electrical behavior of epitaxial high-k Y 2O3/Si(001), Materials Research Society Symposium - Proceedings 747, 177-182.
  • Apostolopoulos, G., Vellianitis, G., Dimoulas, A., Alexe, M., Scholz, R., Fanciulli, M., Dekadjevi, D.T., Wiemer, C. (2002) High epitaxial quality Y2O3 high-? dielectric on vicinal Si(001) surfaces, Applied Physics Letters 81, 3549-.
  • Dimoulas, A., Vellianitis, G., Travlos, A., Ioannou-Sougleridis, V., Nassiopoulou, A.G. (2002) Structural and electrical quality of the high-k dielectric Y2O3 on Si (001): Dependence on growth parameters, Journal of Applied Physics 92, 426-.
  • Vellianitis, G., Apostolopoulos, G., Dimoulas, A., Argyropoulos, K., Mereu, B., Scholz, R., Alexe, M., Hooker, J.C. (2002) Structural quality and electrical behavior of epitaxial high-k Y2O3 / Si(001), Materials Research Society Symposium - Proceedings 745, 367-372.
  • Dimoulas, A., Travlos, A., Vellianitis, G., Boukos, N., Argyropoulos, K. (2001) Direct heteroepitaxy of crystalline Y2O3 on Si (001) for high-k gate dielectric applications, Journal of Applied Physics 90, 4224-4230.
  • Dimoulas, A. (2000) Barrier-induced enhancement of Andreev reflection for minority-spin quasiparticles in ferromagnetic metal/insulator/superconductor ballistic junctions, Physical Review B - Condensed Matter and Materials Physics 61, 9729-9733.
  • Τομέας Επιστήμης Υλικών, Ε.Κ.Ε.Φ.Ε. "Δημόκριτος", 153 10 Αγ. Παρασκευή, Αττική, τηλ.: +30 2106503381, fax: +30 210 6519430
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