N.C.S.R. "Demokritos"

Research

Department of Materials Science

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Athanasios Dimoulas

Researcher A

dimoulas@ims.demokritos.gr
+30 210 6503340


Research Interests

Dr. Dimoulas obtained his Ph.D in Applied Physics from the University of Crete and the Foundation for Research & Technology-Hellas in Greece in 1991 on MBE heteroepitaxial growth and characterization of GaAs and related compounds on Si. He was Human Capital & Mobility Fellow of the EU at the University of Groningen in Holland until 1994, a Research Fellow at the California Institute of Technology (CALTECH), Chemical Engineering, Pasadena USA until 1996 and Research Associate at the University of Maryland at College Park (UMCP) USA, until February 1999. In addition, Dr. Dimoulas was visiting research scientist at NRL, Washington DC, in 1992 and at IBM Zurich Resarch Laboratory, Switzerland, in 2006 and 2007, on sabbatical leave from NCSR DEMOKRITOS. Since 1999, Dr. Dimoulas is research director and head of the MBE laboratory at the Institute of Materials Science of the National Center for Scientific Research DEMOKRITOS, Athens, Greece. He leads several European-funded projects (INVEST, ET4US, DUALLOGIC) in the areas of advanced microelectronic materials and devices. He has authored or co-authored more than 90 technical publications in refereed journals and archives and 3 monographs in Springer book chapters on high-k gates on Si, Ge and GaAs. He has given a number of invited presentations in international conferences. He is co-editor in a Springer book “Advanced gate stacks for high mobility semiconductors” and guest editor in two special volumes of international journals. He has co-authored by invitation a review article on “Contacts to source and drain for Ge and III-V MOSFETs” for the special issue of the MRS bulletin scheduled for publication in the July 2009 issue, featuring alternative high mobility channel materials and devices.He has been the main organizer of E-MRS 2003 symposium on “Functional Oxides on Semiconductors” and of the MRS 2005 symposium on “Advanced Gate Stacks for High Mobility Semiconductors”. Also, he was the general chair of the international INFOS 2007 conference held in Athens in 2007. He has been involved in the organization of other conferences and workshops as a member of the international advisory (steering) committees (ICSI-5 and 6, INFOS 2009, NATO ARW 2005) or as a member of the technical program committees (INFOS 2005, Leuven, ESSDERC 2008, Edinburgh). He is currently chair of the technical program committee of the European ESSDERC conference to be held in Athens in September 2009. His expertise includes MBE growth of semiconductor (including III-Vs) and dielectric materials, nanodevice processing by photo-and e-beam lithography and materials characterization & device electrical testing. His current research interests focus on advanced high-k gate stacks for Si, Ge and III-V MOS technology.

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Department of Materials Science, N.C.S.R. "Demokritos", 153 10 Aghia Paraskevi, Attiki, phone: +30 210 6503381, fax: +30 210 6519430
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