N.C.S.R. "Demokritos"


Department of Materials Science

small logo

Development and Characterization of ZnO nanorods

Zinc oxide (ZnO) is a direct wide band gap semiconductor (Eg=3.37eV). As the exciton binding energy in ZnO is 60meV, i.e. it is higher than the thermal energy at room temperature, the emission of light in ZnO at room temperature is mainly excitonic characterized with high efficiency. Also ZnO possesses a number of intrinsic and extrinsic radiative defect levels which emit light in a wide range within the visible region. Consequently ZnO has a high potential for the development of both ultra-violet lasers as well as white LEDs.

Within the, EU funded, NANDOS research project and with the collaboration of research groups from Universitat Leipzig in Germany and Institut Neel in France, ZnO nanorods with ZnMgO/ZnO quantum wells were grown using pulsed laser deposition (PLD). High resolution transmission electron microscopy (HRTEM) showed that the nanorods were single crystalline and the diameter of the quantum wells was ~5nm. Cathodoluminescence showed that due to these quantum wells the intensity of light is six times higher at room temperature, while at 4.2K the full width at half maximum of the emission peak is as narrow as 1meV.

for more information: Nikos Boukos

Department of Materials Science, N.C.S.R. "Demokritos", 153 10 Aghia Paraskevi, Attiki, phone: +30 210 6503381, fax: +30 210 6519430
Contact Us | ©2008 Institute of Materials Science, N.C.S.R. "Demokritos"