INVEST will replace SiO2 Gate Dielectric by High Permittivity Materials in Complementary Metal-Oxide-Semiconductor (CMOS) Transistors

The miniaturization of semiconductor devices faces a number of major obstacles in the near future because the size of the structures in the transistors approaches atomic dimensions. A transistor can be compared to a valve, which swithes the flow of electrons on and off. The valve is switched by applying a voltage to a so-called oxide. Further reduction of its thickness, will result in leakage currents through the oxide that will annihilate the switching function of the transistor. Silicon dioxide, the main ingredient of window glass, is currently used as gate oxide. In order to restore the switching function, insulators with higher dielectric constant are required that can be integrated with higher thickness and therfore less leakage.


Project Coordinator

Dr. A. Dimoulas

National Center of Scientific Research "DEMOKRITOS"

Institute of Materials Science, MBE Laboratory

Agia Paraskevi - 15310

Athens - Greece

Tel. : +30 10 6503340, +30 10 6503341

Fax : +30 10 6533872, +30 10 6519430

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