Epitaxial Technologies for Ultimate  Scaling
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CONSORTIUM MEMBERS
	Organization / Principle Investigator	Country	RTD role
Project leader:
	National Center of Scientific Research - Demokritos    Dr. A. Dimoulas	Greece	MBE growth of metal oxide high-k dielectrics on Si, Ge and GaAs.  2' substrates. Semiconductor overgrowth for SOI, GOI and SCOI.  2' substrates.
Contractors:
	IBM Dr. J. P. Locquet	Switzerland	MBE growth of epitaxial complex metal oxide high-k dielectrics on Si, Ge and GaAs.  2' substrates. Si, Ge and GaAs overgrowth for SOI and GOI. 2' substrates and 8' substrates.
	Interuniversitair Micro-Electronica Centrum Dr. M. Caymax	Belgium	Materials characterization and processing of transistors with high-k gate stacks on Ge and GOI. 8' substrates.
	DCA Instruments Mr. L. Salminen	Finland	Development of cluster tool.
	Ecole Polytechnique Federale de Lausanne Dr. M. Seo	Switzerland	Development of fast materials MBE growth, processing, characterization cycles using miniature substrates. Structural characterization.
	Laboratorio MDM -  Instituto Nazionale per la Fisica della Materia Dr. M. Fanciulli	Italy	Structural, chemical & Physical characterization. Electrical testing on MIS capacitors.
	Phillips Research Leuven Dr. J. Hooker	Belgium	Fabrication and Characterization of transistors with high-k dielectrics on compound semiconductors. Electrical testing on GaAs MIS capacitors.
	Clausthal University of Technology Prof. P. Bloechl	Germany	Modeling of growth, interfaces and oxide defects.